Use of the field effect to determine the energy dependence of localized state density in amorphous semiconductors
- 1 June 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (11) , 1081-1083
- https://doi.org/10.1016/0038-1098(72)90901-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Measurements of the Field Effect in Amorphous Switching MaterialsApplied Physics Letters, 1971
- Theory of the Field Effect in Amorphous Covalent Semiconductor FilmsJournal of Vacuum Science and Technology, 1971
- Electronic conduction in amorphous semiconductors and the physics of the switching phenomenaJournal of Non-Crystalline Solids, 1970
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967