The location and shape of the conduction band minima in cubic silicon carbide
- 30 September 1977
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 15 (3) , 299-314
- https://doi.org/10.1016/0022-2313(77)90030-8
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Raman Scattering from Electronic Excitations in-Type Silicon CarbidePhysical Review B, 1972
- Magneto-Optical Properties and Recombination Rate of the Green Luminescence in Cubic SiCPhysical Review B, 1970
- Optical Absorption in-Type Cubic SiCPhysical Review B, 1969
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- The conduction bands in 6H and 15R silicon carbide I. Hall effect and infrared Faraday rotation measurementsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Two-Electron Transitions in the Luminescence of Excitons Bound to Neutral Donors in Gallium PhosphidePhysical Review Letters, 1967
- Optical Properties ofSiC: Absorption and LuminescencePhysical Review B, 1965
- Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband AbsorptionPhysical Review B, 1964
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Theory of Donor States in SiliconPhysical Review B, 1955