Novel In(OH)3:Zn2+Buffer Layer for Cu(InGa)Se2Based Solar Cells

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Abstract
A novel In(OH)3:Zn2+ buffer layer was proposed as an alternative for fabricating high-efficiency Cu(InGa)Se2 (CIGS) solar cells. The buffer layers were deposited by chemical bath deposition using ZnCl2, InCl34H2O and thiourea. The structural, electrical and optical properties of In(OH)3:Zn2+ thin films on quartz substrates were determined. Films with resistivity as high as 108 Ωcm and a transmittance of more than 80% have been obtained by regulating the growth conditions. CIGS thin-film solar cells with a ZnO/In(OH)3:Zn2+/CIGS/Mo structure were fabricated. The CIGS absorbers used in this study were prepared using two different deposition processes: three-stage co-evaporation and selenization/sulfurization. The influence of growth conditions of the buffer layer on device performance and device metastability was investigated. The presence of Zn2+ ions in the deposition bath was found to be an important parameter for achieving both device efficiency and metastability. A cell efficiency of 14% without the light-soaking effect was achieved using the In(OH)3:Zn2+ buffer layer.

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