Angular resolved surface-plasmon loss from Si(111) surfaces

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Abstract
The dispersion of plasmon-loss peaks measured with angle resolved electron energy-loss spectroscopy gives evidence of increased surface carrier concentration from B-doped (1015–1016 cm−3) Si(111) surfaces which were Ar sputter cleaned and annealed surfaces at temperatures between 800 and 1250 °C. The plasmon loss dispersion curve (ΔE vs Δk∥) agreed with the calculated plasmon energy and cutoff wave vector for an effective carrier concentration ∼10–50 times greater than the bulk doping density. Annealing at temperatures, T>950 °C reduced the surface plasmon peak presumably by annealing defects, and allowed detection of a surface-phonon loss peak at 22 to 30 meV probably associated with the adatoms of the 7×7 reconstructed surface.

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