Investigation of the structure of the 2×4 reconstructions of GaAs (001) by analysis of RHEED intensity data

Publisher Website

1 May 1988

journal article
Published by Springer Nature in Applied Physics A

Vol. 46 (1) , 25-29
https://doi.org/10.1007/bf00615133

Abstract

No abstract available

Keywords

This publication has 8 references indexed in Scilit:

Dynamic effects in RHEED from MBE grown GaAs(001) surfaces
Surface Science, 1986
On the relation between composition, structure, topography and ionization energy of GaAs(001) surfaces
Surface Science, 1985
Dynamic RHEED observations of the MBE growth of GaAs
Applied Physics A, 1984
Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces
Physical Review B, 1984
$GaAs (001) - c (4 \times 4)$ : A chemisorbed structure
Physical Review B, 1983
Reflection high energy diffraction by the Ag(001), Ag(110) and Ag(111) surfaces
Applications of Surface Science, 1982
Rheed evidence for a domain structure of GaAs(001)−2 × 4 AND −4 × 2 reconstructed surfaces
Surface Science, 1982
A theory of rheed
Surface Science, 1981