Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide

This publication has 13 references indexed in Scilit:

• Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
  Applied Physics Letters, 1997
• Photoluminescence mechanism in surface-oxidized silicon nanocrystals
  Physical Review B, 1997
• Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2
  Applied Physics Letters, 1996
• Stable and efficient electroluminescence from a porous silicon-based bipolar device
  Applied Physics Letters, 1996
• Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films
  Thin Solid Films, 1996
• Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si
  Physical Review B, 1995
• Electroluminescent porous silicon device with anexternal quantum efficiency greater than 0.1% under CW operation
  Electronics Letters, 1995
• High quantum efficiency for a porous silicon light emitting diode under pulsed operation
  Applied Physics Letters, 1995
• Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix
  MRS Proceedings, 1993
• Mechanisms of visible-light emission from electro-oxidized porous silicon
  Physical Review B, 1992