Quantum-Limit Piezoresistance of n-Type Inversion Layers of Silicon and Germanium
- 1 February 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (2) , 735-737
- https://doi.org/10.1063/1.1661190
Abstract
Piezoresistance effects at small and large stresses in n‐type inversion layers of germanium and silicon are discussed by taking proper account of the surface quantization. It is predicted that the quantum‐limit condition peculiar to the inversion layer strongly affects the piezoresistance on Si {100}, {110} and Ge {111}, {110} surfaces.This publication has 5 references indexed in Scilit:
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- The effect of strain on MOS transistorsSolid-State Electronics, 1969
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957