Electrical properties of low-temperature pyrolytic SiO 2 on InP
- 4 February 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (3) , 172-173
- https://doi.org/10.1049/el:19880114
Abstract
The first application of a new technique (SiH4 + O2 at 83–330°C and 2–12 torr) for deposition of SiO2 on InP is reported. SiO2 deposited at 150–330°C has breakdown strength of 8–10MV/cm, resistivity > 1015 Ωcm, and refractive index of 1.45–1.46 comparable to thermal SiO2 grown at 1100°C/V measurements on Al/SiO2/InP MIS structures suggest that very low temperature oxides (90–100°C) have the best interfacial properties.Keywords
This publication has 1 reference indexed in Scilit:
- Physics and Chemistry of III-V Compound Semiconductor InterfacesPublished by Springer Nature ,1985