Ab Initio Cluster Study of the Interaction of Hydrogen with the GaAs(100) Surface
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5R)
- https://doi.org/10.1143/jjap.31.1298
Abstract
The GaAs(100) surface is modeled, using a cluster to study the interaction with hydrogen. On the basis of ab initio theory including electron correlations, the most stable structures for the As-terminated surface with adsorbed hydrogen atoms are established. The optimized structure of the modeled cluster without the adsorbate is also obtained. From the computational results of total energy, the activation energy of the dissociation of the hydrogen molecule on the surface was estimated. The cluster with adsorbed hydrogen atoms is more stable than that without hydrogen, although the approach of the hydrogen molecule toward the surface causes an increase in the total energy.Keywords
This publication has 17 references indexed in Scilit:
- A cluster model study of multiple H adsorption on Be(0001)Surface Science, 1991
- Surface science studies of semiconductor growth processesJournal of Vacuum Science & Technology B, 1988
- Vibrational spectra of hydrogen atoms adsorbed on MBE-grown GaAs(100)Surface Science, 1988
- Theoretical study on the chemisorption of a hydrogen molecule on palladiumJournal of the American Chemical Society, 1987
- Interaction of hydrogen with GaAs (0 0 1)-2×4Solid State Communications, 1985
- The effect of hydrogen chemisorption on GaAs(100) and GaAs(111)Solid State Communications, 1983
- Pseudopotential SCF and Cl investigation of the electronic structure of PdH, PdC and PdCOChemical Physics Letters, 1982
- Hydrogen Adsorption on GaAs(110) Studied by Electron-Energy-Loss SpectroscopyPhysical Review Letters, 1981
- Electronic structure of transition-metal hydrides: NiH and PdHPhysical Review A, 1981
- A complete active space SCF method (CASSCF) using a density matrix formulated super-CI approachChemical Physics, 1980