MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSI

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Abstract
We have developed an MOVPE technique capable of mass-producing HEMT LSI quality AlGaAs/GaAs selectively doped heterostructures by a barrel-type reactor. The reactor grows six three-inch wafers at a time. The uniformities of layer thickness and donor concentration are ±2.1% and ±2.0% across a three-inch wafer, respectively. The wafer-to-wafer uniformities for six wafers are ±2.3% for thickness and ±1.7% for donor concentration. The fabricated ring oscillator circuits having a quarter-micron gate showed an average delay time of 11.6 ps/gate with a standard deviation of 0.46 ps over an entire three-inch wafer.