Complete suppression of filamentation and superior beam quality in quantum-dot lasers
- 4 February 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (6) , 952-954
- https://doi.org/10.1063/1.1533841
Abstract
Comparative near-field and beam-quality measurements on narrow stripe quantum-dot (QD) and quantum-well (QW) lasers of identical structure, both emitting at 1100 nm, are presented. Intrinsic suppression of filamentation in the QD lasers is observed. QD lasers emitting at 1300 nm again show no filamentation. For a 6-μm-stripe, QW laser, increases from 2.6 to 6.1 with output power increasing from 5 to 60 mW and with increasing stripe width (20 mW, In the QD lasers, filamentation is suppressed up to 8 μm (1100 nm) and 9 μm (1300 nm) stripe width and no dependence on output power is observed.
Keywords
This publication has 20 references indexed in Scilit:
- High-reliability MOCVD-grown quantum dot laserElectronics Letters, 2002
- Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dotsApplied Physics Letters, 2002
- Quantum-Dot Vertical-Cavity Surface-Emitting LasersMRS Bulletin, 2002
- Brightness and filamentation of a beam from powerful cw quantum-well In0.2Ga0.8As/GaAs lasersQuantum Electronics, 2000
- 3.5 W CW operation of quantum dot laserElectronics Letters, 1999
- Design parameters for lateral carrier confinement in quantum-dot lasersApplied Physics Letters, 1999
- Spatio-temporal characteristics of filamentation in broad-area semiconductor lasersIEEE Journal of Quantum Electronics, 1997
- InGaAs-GaAs quantum-dot lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laserEurophysics Letters, 1996
- Nonlinear mechanisms of filamentation in broad-area semiconductor lasersIEEE Journal of Quantum Electronics, 1996