Beryllium nitride thin film grown by reactive laser ablation

Preprint

24 March 2001

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0103504

Abstract

Beryllium nitride thin films were grown on silicon substrates by laser ablating a beryllium foil in molecular nitrogen ambient. The composition and chemical state were determined with Auger (AES), X-Ray photoelectron (XPS) and energy loss (EELS) spectroscopies. A low absorption coefficient in the visible region, and an optical bandgap of 3.8 eV, determined by reflectance ellipsometry, were obtained for films grown at nitrogen pressures higher than 25 mTorr. The results show that the reaction of beryllium with nitrogen is very effective using this preparation method, producing high quality films.

Keywords

ABLATION BERYLLIUM
BERYLLIUM NITRIDE
LASER ABLATING
ELLIPSOMETRY
NITRIDE THIN
FILM GROWN
THIN FILM
FILMS

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Version 1, 2001-03-24, ArXiv

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