Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currents
- 6 December 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (25) , 824-826
- https://doi.org/10.1049/el:19790586
Abstract
Channelled-substrate GaAs/GaAlAs injection lasers with very narrow current-confining stripe contacts are described. They have threshold currents less than half those previously reported for this type of device. The best devices had a room-temperature threshold current of only 12 mA pulsed and 14 mA c.w. The lasers also have very good high-temperature performance and c.w. operation has been obtained up to 160°C.Keywords
This publication has 0 references indexed in Scilit: