Phonon scattering by Cr ions in GaAs
- 10 March 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (7) , 1419-1432
- https://doi.org/10.1088/0022-3719/15/7/011
Abstract
Measurements of the thermal conductivity of 13 samples of Cr-doped GaAs within the range of 50 mK to 250K show the presence of strong resonant phonon scattering. Resonances at 21, 80, 150, 400 and 690 GHz which only occur in semi-insulating and p-type samples are attributed to substitutional Cr3+, which appears to be very strongly coupled to the lattice, and a possible level scheme is proposed. Scattering at 2+. Since this could not occur in the static Jahn-Teller limit it provides support for a dynamic model and the data are in agreement with calculations by Abhvani et al. (1981) if the tunnelling parameter delta 13+ concentration in GaAs samples.Keywords
This publication has 24 references indexed in Scilit:
- Investigation of the absorption ofin GaAsPhysical Review B, 1981
- The role of the Jahn-Teller effect in chromium-doped GaAsJournal of Physics C: Solid State Physics, 1981
- EPR measurements on chromium doped GaAs, GaP and InPSolid State Communications, 1980
- Arsenic precipitation at dislocations in GaAs substrate materialJournal of Applied Physics, 1980
- Phonon scattering and interstitial clusters in γ-irradiated LiFJournal of Physics and Chemistry of Solids, 1980
- Electronic states of a substitutional chromium impurity in GaAsPhysical Review B, 1979
- Thermal Conductivity of Gallium Arsenide at Low TemperaturesPhysical Review B, 1973
- Thermal Conductivity of GaAs and GaAs1−xPx Laser SemiconductorsJournal of Applied Physics, 1965
- Phonon Scattering in Semiconductors From Thermal Conductivity StudiesPhysical Review B, 1964
- Low-Temperature Elastic Constants of Gallium ArsenideJournal of Applied Physics, 1962