Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 577-580
- https://doi.org/10.1109/iedm.1990.237132
Abstract
The band-to-band tunneling leakage characteristics of thin oxide MOSFETs are investigated by utilizing stacked-gate structure FETs. The behavior of threshold voltage variations under drain stress with open-circuit source is analyzed in detail. A simple lucky hole injection model is proposed to explain the behavior. Program-disturb phenomena in EPROM cells were well described by the model. The depletion layer along the channel formed by the applied drain voltage gives energy to cold holes created by band-to-band tunneling. Such lucky holes are injected easily and reach the gate electrode.<>Keywords
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