Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
- 1 January 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (1B) , L77
- https://doi.org/10.1143/jjap.35.l77
Abstract
We have observed stimulated emission at room temperature from a photopumped homoepitaxial GaN for the first time. A homoepitaxial layer was grown by atmospheric metalorganic chemical vapor deposition (MOCVD) on small hexagonal bulk GaN prepared by the sublimation method. The lasing threshold of the pumping power density is 0.86 MW/cm2 and the stimulated emission is polarized with its electric vector perpendicular to the c-axis.Keywords
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