Investigation of the interface region produced by molecular beam epitaxial regrowth
- 1 March 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (2) , 137-142
- https://doi.org/10.1007/bf02657399
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Summary Abstract: Cleaning of GaAs substrate by thermal oxidation and sublimation in molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguideOptics Letters, 1987
- The origin of a highly resistive layer at a growth-interrupted interface of GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Aharonov-Bohm effect in semiconductor micro-structures: novel device possibilitiesSuperlattices and Microstructures, 1986
- Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBEJapanese Journal of Applied Physics, 1986
- Effects of GaAs/AlAs superlattice buffer layers on selective area regrowth for GaAs/AlGaAs self-aligned structure lasersApplied Physics Letters, 1985
- Carrier compensation at interfaces formed by molecular beam epitaxyJournal of Applied Physics, 1982
- Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interfaceApplied Physics Letters, 1981
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Interface and doping profile characteristics with molecular-beam epitaxy of GaAs: GaAs voltage varactorJournal of Applied Physics, 1974