Reflectance characterization of semiconductor quantum wells by Fourier transform spectroscopy

Publisher Website

1 August 1991

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 6 (8) , 822-824
https://doi.org/10.1088/0268-1242/6/8/020

Abstract

No abstract available

Keywords

This publication has 7 references indexed in Scilit:

Reflectance Spectroscopy of (GaP)_n(GaAs)_n/GaAs Atomic Layer Superlattices
Japanese Journal of Applied Physics, 1991
Reflectance study of interwell couplings in GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As double quantum wells
Physical Review B, 1990
Line-shape analysis of the reflectivity spectra of GaAs/(Ga,Al)As single quantum wells grown on (001)- and (311)-oriented substrates
Physical Review B, 1990
Photoreflectance study of narrow-well strained-layer ${In}_{x}$ ${Ga}_{1 - x}$ As/GaAs coupled multiple-quantum-well structures
Physical Review B, 1988
Reflectance spectroscopy on GaAs- ${Ga}_{0.5}$ ${Al}_{0.5}$ As single quantum wells under in-plane uniaxial stress at liquid-helium temperature
Physical Review B, 1988
Reflectance line shapes from GaAs/Ga1−xAlxAs quantum well structures
Applied Physics Letters, 1988
Schottky-Barrier Electroreflectance: Application to GaAs
Physical Review B, 1973