X-Ray Interferometry of Volume Changes in C+Implanted Silicon
Open Access
- 1 May 1973
- journal article
- Published by Walter de Gruyter GmbH in Zeitschrift für Naturforschung A
- Vol. 28 (5) , 654-656b
- https://doi.org/10.1515/zna-1973-0518
Abstract
High energy C+ implantation is used to construct a two crystal monolithic X-ray interferometer. The X-ray interferometer technique is applied to in-situ studies of radiation damage annealing in the interferometer. Volume changes in the crystal due to the transformation of single crystal silicon to amorphous silicon and due to the formation of silicon carbide are measured.Keywords
This publication has 0 references indexed in Scilit: