In-situ Fourier transform infrared spectroscopy of electrochemical processes at the silicon—acetonitrile interface
- 1 January 1993
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry
- Vol. 344 (1-2) , 187-198
- https://doi.org/10.1016/0022-0728(93)80055-m
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfacesJournal of Vacuum Science & Technology A, 1989
- Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphologyApplied Physics Letters, 1988
- Infrared spectroelectrochemistryChemical Reviews, 1988
- Experimental techniques for the study of the semiconductor—electrolyte interfaceElectrochimica Acta, 1988
- The surface state of Si (100) and (111) wafers after treatment with hydrofluoric acidAIP Conference Proceedings, 1988
- Fourier transform electrochemically modulated infrared spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1987
- In-situ FTIR reflection spectroscopy for the semiconductor electrolyte interfacesSurface Science, 1986
- Differential reflection spectroscopy of very thin surface filmsSurface Science, 1971
- Electric Field Strengths at Totally Reflecting InterfacesJournal of the Optical Society of America, 1965