ELLIPSOMETRY APPLIED TO THE STUDY OF SEMICONDUCTOR SURFACES

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Abstract
Ellipsometry is an optical reflection technique which is highly sensitive to surface effects. The present paper briefly lines out the questions and problems arising in optical reflectance measurements on semiconductor surfaces. The electronic structure of a semiconductor surface is characterized by intrinsic electronic surface states, by states due to adsorbate coverages and by space charge layers. The value of ellipsometry in studying these effects is demonstrated by means of exemplary results obtained on ultrahigh vacuum (UHV) prepared Si (111) and GaAs (110) surfaces. Measurements at a fixed wavelength allow the investigation of adsorption kinetics. Ellipsometric spectroscopy is applied to the study of optical transitions between electronic surface states. Furthermore, changes of the optical constants in the space charge layer due to gas adsorption can be used to monitor band bending changes

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