Evidence for ɛ 2-conductivity in the magnetoresistance of multivalley semiconductors
- 1 February 1999
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 33 (2) , 135-142
- https://doi.org/10.1134/1.1187659
Abstract
Experimental studies of the liquid-helium temperature resistivities of Ge:Sb compounds with degrees of compensation Kɛ2 conductivity range, reveal that the resistivity is determined by hopping of carriers activated to the upper Hubbard D− band. The experimentally observed positive magnetoresistance, which is exponential in the magnetic field, arises from field-induced changes in the occupancy of the spin subbands by electrons. Evidence for the ɛ2-conductivity mechanism is discussed on the basis of certain features of the magnetoresistance associated with g-factor anisotropy of different valleys, which is therefore specific to multivalley semiconductors.Keywords
This publication has 9 references indexed in Scilit:
- Magnetoresistance related to on-site spin correlations in the nearest neighbor hopping conductivitySolid State Communications, 1998
- H−-Like Impurity Centers, Molecular Complexes and Electron Delocalization in SemiconductorsPublished by Elsevier ,1985
- Electronic Properties of Doped SemiconductorsPublished by Springer Nature ,1984
- Correlation Effects on Variable Range Hopping Conduction and the MagnetoresistanceJournal of the Physics Society Japan, 1982
- High-field magnetoresistance of hopping transport in the disordered impurity system of transmutation-doped GePhysical Review B, 1977
- Magnetically Induced Spin-Reversal Transitions in Impurity Hop Conduction in-Type GermaniumPhysical Review B, 1968
- Magnetoresistance of Uniaxially Stressed Germanium in Impurity Band Conduction RegionJournal of the Physics Society Japan, 1967
- Impurity Conduction in the Intermediate Concentration RegionPhysical Review B, 1965
- Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type GermaniumJournal of the Physics Society Japan, 1963