Correlation of I–V Characteristic with Noise for Ion Drifted p-i-n Junction Particle Detectors
- 1 March 1964
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 35 (3) , 388-392
- https://doi.org/10.1063/1.1718828
Abstract
This paper describes a technique for achieving minimum noise in a p‐i‐n particle detector. The reverse saturation current of the detector and its relative noise are correlated for different surface treatments. The data show that the reverse current at the detector operating voltage is not a sufficient measure of relative noise. The relative noise can be predicted from the reverse current at two to three times the operating voltage.Keywords
This publication has 7 references indexed in Scilit:
- The Spacecraft Radiation ExperimentsBell System Technical Journal, 1963
- Amplifiers for Use with P-N Junction Radiation DetectorsIRE Transactions on Nuclear Science, 1961
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960
- 1/fNoise in Germanium DevicesProceedings of the Physical Society, 1959
- Effects of Certain Chemical Treatments and Ambient Atmospheres on Surface Properties of SiliconJournal of the Electrochemical Society, 1958
- Electron Multiplication in Silicon and GermaniumPhysical Review B, 1953
- Electrical Noise In SemiconductorsBell System Technical Journal, 1952