Direct nonlinear FET parameter extraction using large-signal waveform measurements
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (5) , 130-132
- https://doi.org/10.1109/75.217205
Abstract
A method that permits a direct nonlinear extraction of two FET parameters, the drain current generator, and the gate source capacitor from large-signal waveform measurements, is presented. For demonstration, the high-frequency characteristics of the nonlinear drain current generator for a GaAs MESFET and a MODFET are extracted. Significant differences between the DC and RF characteristics, are observed and interpreted.Keywords
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