Voltage dependence of magnetoresistance in spin dependent tunneling junctions
- 1 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (11) , 6512-6514
- https://doi.org/10.1063/1.367644
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Voltage dependence of the magnetoresistance and the tunneling current in magnetic tunnel junctions (abstract)Journal of Applied Physics, 1997
- Microstructured magnetic tunnel junctions (invited)Journal of Applied Physics, 1997
- Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)Journal of Applied Physics, 1996
- Spin dependent tunneling devices fabricated using photolithographyIEEE Transactions on Magnetics, 1996
- Correlation of trap generation to charge-to-breakdown (Q/sub bd/): a physical-damage model of dielectric breakdownIEEE Transactions on Electron Devices, 1994
- Tunneling between ferromagnetic filmsPhysics Letters A, 1975
- Josephson Tunneling Barriers by rf Sputter Etching in an Oxygen PlasmaJournal of Applied Physics, 1971
- Physics of Preparation of Josephson BarriersJournal of Applied Physics, 1968