Effect of pressure on the solid phase epitaxial regrowth rate of Si
- 1 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 232-233
- https://doi.org/10.1063/1.96228
Abstract
The hydrostatic pressure dependence of the solid phase epitaxial growth rate of 〈100〉 Si into ion implanted amorphous Si at 500 °C has been monitored by Rutherford backscattering and channeling techniques. The growth rate increases with pressure so that at 20 kbar it is 14 times the ambient value. The increase is described by an activation volume for the process of −8.7 cm3/mole.Keywords
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