Heating effects on the accuracy of HBT voltage comparators
- 1 August 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (8) , 1729-1735
- https://doi.org/10.1109/t-ed.1987.23144
Abstract
Voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBT's) were examined for dynamic hysteresis effects. Heating effects were identified as the major source of hysteresis. An approximate model is proposed to explain the measured data. Suggestions for analog-to-digital converter design are discussed.Keywords
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