pH dependence of the Si/SiO2 interface state density for EOS systems
- 1 October 1985
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
- Vol. 193 (1-2) , 75-88
- https://doi.org/10.1016/0022-0728(85)85053-1
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- The influence of counter-ion adsorption on the ψ0/pH characteristics of insulator surfacesSurface Science, 1983
- Semiconductor Electrodes: XLIX . Evidence for Fermi Level Pinning and Surface‐State Distributions from Impedance Measurements in Acetonitrile Solutions with Various Redox CouplesJournal of the Electrochemical Society, 1983
- Semiconductor Electrodes: XLVII . A‐C Impedance Technique for Evaluating Surface State Properties of in Acetonitrile Solutions Containing Various Redox CouplesJournal of the Electrochemical Society, 1983
- Dependence of interface state properties of electrolyte-SiO2-Si structures on pHIEEE Transactions on Electron Devices, 1982
- The history of chemically sensitive semiconductor devicesSensors and Actuators, 1981
- Standardized Terminology for Oxide Charges Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1980
- The silicon/silica electrodePhysica Status Solidi (a), 1980
- The Si3N4/Si ion-sensitive semiconductor electrodeIEEE Transactions on Electron Devices, 1979
- Basic properties of the electrolyte—SiO2—Si system: Physical and theoretical aspectsIEEE Transactions on Electron Devices, 1979
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970