Resistivity measurements on thin crystals of 1T-, 2H-, and 6R-TaS2 show that anomalies persist down to sample thicknesses of 100 Å. The resistivity of 1T-TaS2 can be described by an activation energy of 5 meV between 50 and 150 K. 6R-TaS2 is metallic and has resistive anomalies around 325 K.