Effective collision strengths for Si II
- 15 February 1991
- journal article
- research article
- Published by Oxford University Press (OUP) in Monthly Notices of the Royal Astronomical Society
- Vol. 248 (4) , 827-828
- https://doi.org/10.1093/mnras/248.4.827
Abstract
Collision strengths are presented for electron impact excitation among the eight lowest LS states (corresponding to 15 levels including the splitting of the doublet and quartet terms) of Si II calculated using the R-matrix method. These collision strengths are used to deduce effective collision strengths adopting a Maxwellian electron energy distribution for electron temperatures (Te) between log Te = 3.6 and 4.6. Results are presented for all transitions among the seven lowest levels and also for transitions from the ground state |$3{S}^{2}3{p}^{2}{P}_{J}$| levels to more excited states.Keywords
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