Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodetector for long-wavelength high-data-rate fibre-optic systems
- 4 July 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (14) , 593-595
- https://doi.org/10.1049/el:19850419
Abstract
A novel GaInAs substrate illuminated photodetector structure is reported for the 1.0–1.7 μm wavelength range with capacitance as low as 0.02 pF, packaging stray capacitance below 0.02 pF, 97% quantum efficiency and subnanoampere leakage current. The device is rugged, epoxy-free, does not use an integral fibre pig-tail and wire bonding to the detector chip is not required.Keywords
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