Reduction of leakage current of large-area high-resistivity silicon p-i-n photodiodes for detection at 1.06 µm
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (4) , 412-416
- https://doi.org/10.1109/t-ed.1981.20356
Abstract
An experimental study has been carried out to reduce the leakage current of large-area (>2.5 cm2) high-resistivity (p-type, 8000 to 15 000 Ω . cm) fully depleted silicon p-i-n photodiodes. A new process technology, using low temperature oxidation and utilizing complete implantation doping, has been successfully developed. This process reproducibly gives photodiodes with generation-limited leakage current. The lowest level of leakage current achieved is in the order of 1 µA/cm3per unit depletion volume at 200-V reverse bias.Keywords
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