Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs

• 1 March 1973
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 12  (3) , 478-479
• https://doi.org/10.1143/jjap.12.478

Abstract

Keywords

• EDGE PHOTOLUMINESCENCE
• DOPED EPITAXIAL
• EPITAXIAL GAAS
• GE DOPED
• BAND EDGE