Advanced Thin-Film Metallurgy for Beam-Leaded Integrated Circuits

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Abstract
Interconnection metallizations of integrated circuits must exhibit good ohmic contact, chemical inertness, low atomic mobility, good adherence, high conductivity, and compatibility with metal-dielectric multilayering. This paper describes a multimetal interconnection system which provides both multilayer interconnections and beam leads. The film stack includes combinations of the following layers, depending on the specific functional surface area: platinum silicide, silicon dioxide, molybdenum, silicon nitride, chromium, titanium, platinum, gold, and glass. Chemical surface reaction, vapor deposition, cathode sputtering, and electroplating have been employed as deposition methods. Fabrication processes as well as test results obtained on complex integrated circuits are discussed in detail.

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