New low temperature processing of sol-gel SrBi2Ta2O9thin films
- 1 January 1997
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 14 (1-4) , 123-131
- https://doi.org/10.1080/10584589708019984
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Ultra-Thin Fatigue-Free Bi4Ti3O12 Films for Nonvolatile Ferroelectric MemoriesJapanese Journal of Applied Physics, 1996
- Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin filmsApplied Physics Letters, 1996
- Fatigue-free ferroelectric capacitors with platinum electrodesNature, 1995
- Preparation and ferroelectric properties of SrBi2Ta2O9 thin filmsApplied Physics Letters, 1995
- Polarization Fatigue Characteristics of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film CapacitorsJapanese Journal of Applied Physics, 1994
- Recent results on switching, fatigue and electrical characterization of sol-gel based PZT capacitorsFerroelectrics, 1991
- Fatigue and switching in ferroelectric memories: Theory and experimentJournal of Applied Physics, 1990
- Ferroelectric MemoriesScience, 1989
- An experimental 512-bit nonvolatile memory with ferroelectric storage cellIEEE Journal of Solid-State Circuits, 1988
- A new ferroelectric memory device, metal-ferroelectric-semiconductor transistorIEEE Transactions on Electron Devices, 1974