The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 21 (2) , 28-35
- https://doi.org/10.1109/MSPEC.1984.6370174
Abstract
A description is given of an experimental GaAs-AlGaAs device that switches in picoseconds and generates little heat. Known as MODFET or HEMT, the device is compared to other less conventional devices, and an outline is presented of its operation.Keywords
This publication has 0 references indexed in Scilit: