Time-resolved-spectrum studies of GaN light emitting diodes
- 9 December 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (24) , 3668-3670
- https://doi.org/10.1063/1.117183
Abstract
Time‐resolved‐emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination.Keywords
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