Synthesis and ferroelectric properties of c-axis oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon
- 26 February 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (9) , 1209-1210
- https://doi.org/10.1063/1.115971
Abstract
C-axis oriented Bi4Ti3O12films have been prepared on Pt/Ti/Si(111) substrates by sol-gel process. Crack-free films of 0.5 μm thickness were fabricated using a multilayer spinning technique and calcination at 600 °C for 30 min. The average grain size of the film is about 0.15 μm. The film exhibits ferroelectric hysteresis with remanent polarization Pr=4.8 μc/cm2 and coercive field Ec=70 kV/cm. The measured dielectric constant and loss factor at a frequency of 100 kHz are 170 and 0.02 respectively.Keywords
This publication has 0 references indexed in Scilit: