Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Time-resolved photoluminescence studies of InGaN epilayersApplied Physics Letters, 1996
- Excitonic recombination in GaN grown by molecular beam epitaxyApplied Physics Letters, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Linewidth dependence of radiative exciton lifetimes in quantum wellsPhysical Review Letters, 1987