Ga 0.47 In 0.53 As metal-semiconductor-metal photodiodes using a lattice mismatched Al 0.4 Ga 0.6 As Schottky assist layer

Publisher Website
Google Scholar
Abstract
Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GaInAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a selfalignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1.