Sub-70 nm extreme ultraviolet lithography at the Advanced Light Source static microfield exposure station using the engineering test stand set-2 optic
- 1 November 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (6) , 2829-2833
- https://doi.org/10.1116/1.1524976
Abstract
Static microfield printing capabilities have recently been integrated into the extreme ultraviolet interferometer operating at the Advanced Light Source synchrotron radiation facility at Lawrence Berkeley National Laboratory. The static printing capabilities include a fully programmable scanning illumination system enabling the synthesis of arbitrary illumination coherence (pupil fill). This new exposure station has been used to lithographically characterize the static imaging performance of the Engineering Test Stand Set-2 optic. Excellent performance has been demonstrated down to the 70 nm equal line/space level with focus latitude exceeding 1 μm and dose latitude of approximately 10%. Moreover, equal line/space printing down to a resolution of 50 nm has been demonstrated using resolution-enhancing pupil fills.Keywords
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