Stacked Transistors CMOS (ST-MOS), an NMOS Technology Modified to CMOS
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (2) , 215-219
- https://doi.org/10.1109/jssc.1982.1051719
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Laser light absorption in multilayersJournal of Applied Physics, 1981
- Intermediate Oxide Formation in Double‐Polysilicon Gate MOS StructureJournal of the Electrochemical Society, 1980
- One-gate-wide CMOS Inverter on laser-recrystallized polysiliconIEEE Electron Device Letters, 1980
- Capacitance voltage characterization of poly SiSiO2Si structuresSolid-State Electronics, 1980
- Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beamJournal of Applied Physics, 1980
- Silicon-on-insulator m.o.s.f.e.t.s fabricated on laser-annealed polysilicon on SiO 2Electronics Letters, 1979
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978
- PSA-a new approach for bipolar LSIIEEE Journal of Solid-State Circuits, 1978
- Evidence for surface asperity mechanism of conductivity in oxide grown on polycrystalline siliconJournal of Applied Physics, 1977
- Field-effects in polycrystalline-silicon filmsSolid-State Electronics, 1972