Short-channel C-MOS/SOS technology

1 August 1978

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 25 (8) , 989-995
https://doi.org/10.1109/t-ed.1978.19212

Abstract

Design, fabrication, and characterization of Si-gate short-channel C-MOS/SOS devices with channel length ranging from 1 to 3 µm are presented. Basic device parameters and their interrelations are discussed and illustrated in detail. Extremely-high-speed and low-power capability has been demonstrated for short-channel devices operating from a 5-V supply voltage. The process reproducibility and circuit performance point to the suitability of short-channel C-MOS/SOS technology for VLSI applications.

Keywords

BREAKDOWN VOLTAGE
THRESHOLD VOLTAGE
FABRICATION
VERY LARGE SCALE INTEGRATION
NETWORK ANALYSIS
TESTING
CIRCUITS
POWER DISSIPATION
ELECTRICAL RESISTANCE
DOPING

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