Optical investigation of CdTe monomolecular islands in wide ZnTe/(Zn,Mg)Te quantum wells: Evidence of a vertical self-ordering
- 15 August 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 56 (7) , 3907-3912
- https://doi.org/10.1103/physrevb.56.3907
Abstract
Continuous, piezomodulated, and time-resolved optical spectroscopies have been carried out on several samples basically consisting of a 38-nm-wide ZnTe quantum well incorporating monomolecular CdTe islands grown by molecular-beam epitaxy on nominal (001) ZnTe surfaces. During the growth of some samples, five regularly spaced monomolecular layers (single or half-monolayers) of CdTe were inserted in the wide ZnTe quantum wells. Our results indicate that, under certain conditions of deposition, (i) the fractional layers constitute CdTe islands separated by ZnTe “voids,” with in-plane size and spacing quite larger than the exciton Bohr diameter; and (ii) when several fractional monolayers are grown, these islands tend to stack on top of each other. The effects of this vertical self-ordering disappear when the conditions of deposition are changed. Moreover, it is shown that the CdTe inserts act as giant isoelectronic recombination centers, yielding intense and sharp photoluminescence lines with very short decay times (a few tens of picoseconds) in the range of λ≈517 nm.Keywords
This publication has 20 references indexed in Scilit:
- Atomic layer epitaxy of CdTe and MnTeJournal of Applied Physics, 1996
- Electronic and optical properties of the fractional ZnTe-monolayer superlattice structuresJournal of Crystal Growth, 1996
- Band filling at low optical power density in semiconductor dotsApplied Physics Letters, 1995
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrixApplied Physics Letters, 1995
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- ZnTe fractional monolayers and dots in a CdTe matrixJournal of Crystal Growth, 1994
- Differential spectroscopy of GaAs-AAs quantum wells: An unambiguous identification of light-hole and heavy-hole statesPhysical Review B, 1987
- On the elastic stabilization of precipitates against coarsening under applied loadActa Metallurgica, 1984
- On the modulated structure of aged Ni-Al alloysActa Metallurgica, 1966