Effects of the environment on point-defect energy levels in semiconductors
- 1 September 1981
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 19 (3) , 502-507
- https://doi.org/10.1116/1.571047
Abstract
Deep impurity energy levels within the band gap of a semiconductor can be altered and manipulated by changing the environment of the impurity. The effects of a second impurity, an interface, and a surface have been evaluated for substitutional deep levels in a variety of semiconductor hosts.Keywords
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