Fabrication and analysis of GaAs Schottky barrier diodes fabricated on thin membranes for terahertz applications
- 1 July 1989
- journal article
- Published by Springer Nature in International Journal of Infrared and Millimeter Waves
- Vol. 10 (7) , 779-787
- https://doi.org/10.1007/bf01011490
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Millimeter frequency conversion using Au-n-type GaAs Schottky barrier epitaxial diodes with a novel contacting techniqueProceedings of the IEEE, 1965