Preparation of CuInS2 thin films by single-source MOCVD process using Bu2In(SPr)Cu(S2CNPri 2)
- 1 January 1992
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 2 (7) , 765-766
- https://doi.org/10.1039/jm9920200765
Abstract
Chalcopyrite CuInS2, thin layers were successfully prepared by a single-source metal-organic chemical vapour deposition (MOCVD) process using Bu2In(SPri)Cu(S2CNPri 2) as a new source material at 400 °C of Tsub under reduced pressure of ca. 0.8 Torr.Keywords
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