Electron-hole transport in (La0.9Sr0.1)0.98Ga0.8Mg0.2O3−δ electrolyte: effects of ceramic microstructure
- 1 June 2003
- journal article
- Published by Elsevier in Electrochimica Acta
- Vol. 48 (13) , 1817-1828
- https://doi.org/10.1016/s0013-4686(03)00247-0
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Partial electronic conductivity and electrolytic domain of La0.9Sr0.1Ga0.8Mg0.2O3−δSolid State Ionics, 2001
- Material properties of La0.8Sr0.2Ga0.9+xMg0.1O3−δ as a function of Ga contentSolid State Ionics, 2000
- Oxygen ion conductivity and cell performance of La0.9Ba0.1Ga1−xMgxO3−δ electrolyteSolid State Ionics, 2000
- Thermal expansion of Sr- and Mg-doped LaGaO3Solid State Ionics, 2000
- Effect of A-site cation nonstoichiometry on the properties of doped lanthanum gallateSolid State Ionics, 1998
- Superior Perovskite Oxide‐Ion Conductor; Strontium‐ and Magnesium‐Doped LaGaO3: I, Phase Relationships and Electrical PropertiesJournal of the American Ceramic Society, 1998
- High-Temperature Powder Neutron Diffraction Study of the Oxide Ion Conductor La0.9Sr0.1Ga0.8Mg0.2O2.85Journal of Solid State Chemistry, 1998
- Processing and Electrical Properties of Alkaline Earth‐Doped Lanthanum GallateJournal of the Electrochemical Society, 1997
- Superior Oxygen Ion Conductivity of Lanthanum Gallate Doped with Strontium and MagnesiumJournal of the Electrochemical Society, 1996
- Doped LaGaO3 Perovskite Type Oxide as a New Oxide Ionic ConductorJournal of the American Chemical Society, 1994