Nonalloyed ohmic contacts for p + -type InGaAs base layer in HBTs
- 19 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (24) , 2237-2238
- https://doi.org/10.1049/el:19921437
Abstract
Two new metallisation systems, Pd/Pt and Cr/Au, for non-alloyed ohmic contacts on p+-InGaAs have been compared with the Ti/Pt contact. The observed strong dependence of the contact resistivity on the metal is related to its work function. The lowest resistivities are achieved with Pd/Pt, e.g. 1.2 × 10−6 Ωcm2 for p = 1.7 × 1019 cm−3 .Keywords
This publication has 0 references indexed in Scilit: