Calculation of surface states in accumulation layer of tellurium
- 30 April 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 22 (3) , 165-168
- https://doi.org/10.1016/0038-1098(77)90263-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- De Haas‐van Alphen‐Type Oscillations in the Interband Faraday Effect of TelluriumPhysica Status Solidi (b), 1975
- Cyclotron resonance of electrons and holes in electric surface subbands of telluriumSolid State Communications, 1975
- Effect of Electric and Magnetic Fields on the Self-Consistent Potential at the Surface of a Degenerate SemiconductorPhysical Review B, 1972
- Conduction band edge of telluriumSolid State Communications, 1971
- The Valence Band Structure of Tellurium. I. The k·p Perturbation MethodJournal of the Physics Society Japan, 1970